STAC3933 Datasheet, PDF (1/14 Pages) STMicroelectronics – Excellent thermal stability

STAC3933
RF power transistor:
HF/VHF/UHF RF power N-channel MOSFETs
Preliminary data
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 350 W min. with 29 dB gain @ 30 MHz
■ STAC air cavity packaging technology -
STAC^® package
Description
The STAC3933 is an N-channel MOS field-effect
RF power transistor, intended for use in 100 V DC
large signal applications up to 200 MHz.
STAC177B
Figure 1. Pin connection
1 (drain)
4 (source)
2 (source)
3 (gate)
5 (source) on
backside
Table 1. Device summary
Order code
Marking
Base qty.
Package
STAC3933
STAC3933⁽¹⁾
25 pcs
STAC177B
1. For more details please refer to Chapter 6: Marking, packing and shipping specifications..
Packaging⁽¹⁾
Plastic tray
January 2012
Doc ID 022696 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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