STAC3932F Datasheet, PDF (1/16 Pages) STMicroelectronics – Excellent thermal stability

STAC3932F
RF power transistors
HF/VHF/UHF N-channel MOSFETs
Preliminary data
Features
■ Excellent thermal stability
■ Common source push-pull configuration
■ POUT = 580 W typ. with 24.6 dB gain @ 123
MHz
■ In compliance with the 2002/95/EC European
directive
Description
The STAC3932F is a N-channel MOS field-effect
RF power transistor. It is intended for use in 100 V
DC large signal applications up to 250 MHz.
STAC244F
Air cavity
!-V
Figure 1. Pin connection
2
1. Drain
2. Gate
1
1
2
3
3. Source
(Bottom side)
!-V
Table 1. Device summary
Order code
Marking
STAC3932F
STAC3932F
Package
STAC244F
Packaging
Plastic tray
March 2010
Doc ID 15513 Rev 4
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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