STAC2943 Datasheet, PDF (1/12 Pages) STMicroelectronics – Excellent thermal stability

STAC2943
RF power transistor:
HF/VHF/UHF RF power N-channel MOSFETs
Preliminary data
Features
■ High power capability
■ P_OUT = 350 W min. with 22dB gain @ 30 MHz
■ P_SAT = 450 W
■ Low R_DS(on)
■ STAC air cavity packaging technology -
STAC^® package
■ Gold metallization
■ Excellent thermal stability
■ Common source configuration
Description
The STAC2943 is a gold metallized N-channel
MOS field-effect RF power transistor, intended for
use in 50 V dc large signal applications up to 150
MHz. This device offers a 20% higher power
saturation than the SD2933, and is ideal for ISM
applications where reliability and ruggedness are
critical factors.
STAC177B
Figure 1. Pin connection
1 (drain)
4 (source)
2 (source)
3 (gate)
5 (source) on
backside
Table 1. Device summary
Order code
Marking
Base qty.
Package
STAC2943
STAC2943⁽¹⁾
25 pcs
STAC177B
1. For more details please refer to Chapter 6: Marking, packing and shipping specifications..
Packaging⁽¹⁾
Plastic tray
January 2012
Doc ID 022675 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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