STAC2932F Datasheet, PDF (1/14 Pages) STMicroelectronics – Excellent thermal stability

STAC2932F
RF power transistor
HF/VHF/UHF RF power N-channel MOSFETs
Features
■ Gold metallization
■ Excellent thermal stability
■ Common source push-pull configuration
■ P_OUT = 300 W min. with 20 dB gain @ 175 MHz
■ In compliance with the 2002/95/EC European
directive
■ ST air cavity packaging technology - STAC^™
package
Description
STAC244F
Air cavity
The STAC2932F is a gold metallized N-channel
MOS field-effect RF power transistor, intended for
use in 50 V DC large signal applications up to 250
MHz.
Figure 1. Pin connection
1
The STAC2932F benefits from the latest
1
generation of efficient, patent-pending package
technology, otherwise known as STAC^™.
2
2
3
1. Drain
2. Gate
3. Source
(Bottom side)
Table 1. Device summary
Order code
Marking
Base qty.
Package
STAC2932FW
STAC2932F⁽¹⁾
20
STAC244F
1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.
Packaging
Tray
January 2012
Doc ID 17120 Rev 3
1/14
www.st.com
14