STAC2932B Datasheet, PDF (1/14 Pages) STMicroelectronics – Excellent thermal stability

STAC2932B
HF/VHF/UHF RF power N-channel MOSFETs
STAC244B
Air cavity
Figure 1. Pin connection
1
1
2
3
3
1. Drain
2. Source (bottom side)
3. Gate
Datasheet - production data
Features
• Gold metallization
• Excellent thermal stability
• Common source push-pull configuration
• P_OUT = 300 W min. with 20 dB gain @ 175 MHz
• In compliance with the 2002/95/EC European
directive
•
™
ST air cavity packaging technology - STAC
package
Description
The STAC2932B is a gold metallized N-channel
MOS field-effect RF power transistor, intended for
use in 50 V DC large signal applications up to 250
MHz.
The STAC2932B benefits from the latest
generation of efficient, patent-pending package
™
technology, otherwise known as STAC .
Table 1. Device summary
Order code
Marking
Base qty.
Package
(1)
STAC2932BW
STAC2932
20
STAC244B
1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.
Packaging
Tray
January 2014
This is information on a product in full production.
DocID15497 Rev 6
1/14
www.st.com