STAC150V2-350E Datasheet, PDF (1/12 Pages) STMicroelectronics – Excellent thermal stability

STAC150V2-350E
RF power transistor:
HF/VHF/UHF RF power N-channel MOSFET
Datasheet − production data
Features
■ Operating frequencies up to 40.68 MHz
■ Excellent thermal stability
■ P_OUT = 350 W with 17 dB gain @
40.68 MHz/150 V
■ Designed for class E operation
■ V_(BR)DSS > 700 V
■ STAC air cavity packaging technology -
®
STAC package
■ In compliance with the 2002/95/EC1 European
directive
Description
The STAC150V2-350E is a high voltage N-
channel MOS field-effect RF power transistor
especially designed for 150V Industrial RF power
class E generators such as PECVD plasma
sputtering, flat panel and solar cells
manufacturing equipments. STAC150V2-350E
®
benefits from the latest generation of STAC air
cavity package which exhibits a 25% lower
thermal resistance compared to equivalent
ceramic package.
STAC177B
Figure 1. Pin connection
1 (drain)
4 (source)
2 (source)
3 (gate)
5 (source) on
backside
Table 1. Device summary
Order code
Marking
Base qty.
Package
STAC150V2-350E
(1)
150V2-350
25 pcs
STAC177B
1. For more details please refer to Chapter 6: Marking, packing and shipping specifications..
Packaging
Plastic tray
January 2013
This is information on a product in full production.
Doc ID 024198 Rev 1
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