ST93CS56 Datasheet, PDF (1/16 Pages) STMicroelectronics – 2K 128 x 16 SERIAL MICROWIRE EEPROM

ST93CS56
ST93CS57
2K (128 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS56
– 2.5V to 5.5V for the ST93CS57
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS56 and ST93CS57 are replaced by
the M93S56
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93CS56 and ST93CS57 are 2K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 2K bit memory is organized as 128 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
Table 1. Signal Names
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
PRE
W
Protect Enable
Write Enable
VCC
Supply Voltage
V_SS
Ground
D
C
S
PRE
W
VCC
ST93CS56
ST93CS57
VSS
Q
AI00896B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/16