ST93C66 Datasheet, PDF (1/13 Pages) STMicroelectronics – 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

ST93C66
ST93C67
4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
DUAL ORGANIZATION: 256 x 16 or 512 x 8
BYTE/WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for ST93C66 version
– 3V to 5.5V for ST93C67 version
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93C66 and ST93C67 are replaced by the
M93C66
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (CM)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
This specification covers a range of 4K bit serial
EEPROM products, the ST93C66 specified at 5V
± 10% and the ST93C67 specified at 3V to 5.5V. In
the text, products are referred to as ST93C66.
The ST93C66 is a 4K bit Electrically Erasable
Programmable Memory (EEPROM) fabricated with
SGS-THOMSON’s High EnduranceSingle Polysili-
con CMOS technology. The memory is accessed
through a serial input (D) and output (Q). The 4K
bit memory is divided into either 512 x 8 bit bytes
or 256 x 16 bit words. The organization may be
selected by a signal applied on the ORG input.
Table 1. Signal Names
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
ORG
Organisation Select
VCC
Supply Voltage
VSS
Ground
D
C
S
ORG
VCC
ST93C66
ST93C67
VSS
Q
AI01252B
July 1997
This is information on a product still in production bu t not recommended for new de signs.
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