ST13007DFP Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
ST13007DFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
s HIGH VOLTAGE CAPABILITY
s INTEGRATED FREE-WHEELING DIODE
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERIZED AT 125 ^oC
s LARGE RBSOA
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
s UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Visol
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at Tc ≤ 25 ^oC
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
700
400
9
8
16
4
8
36
1500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o_C
o_C
May 2003
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