ST13005_01 Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST13005
®
STB13005-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s MEDIUM VOLTAGE CAPABILITY
s NPN TRANSISTORS
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
3
2
1
TO-220
123
I2PAK
TO-262
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
June 2001
Value
700
400
9
4
8
2
4
75
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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