SOC2907A Datasheet, PDF (1/21 Pages) STMicroelectronics – Hi-Rel 60 V, 0.6 A PNP transistor

2N2907AHR
Hi-Rel 60 V, 0.6 A PNP transistor
3
1
2
LCC-3
1
2
3
TO-18
3
4
1
2
UB
Pin 4 in UB is connected to the metallic lid.
Figure 1. Internal schematic diagram
Features
Datasheet - production data
Parameter
BV_CEO
I_C (max)
H_FE at 10 V - 150 mA
Value
60 V
0.6 A
> 100
• Hermetic packages
• ESCC and JANS qualified
• European preferred part list EPPL
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Device
Qualification
system
Table 1. Device summary
Agency specification Package
JANS2N2907AUBx
2N2907ARUBx
2N2907AUB0xSW35
2N2907AUB0x
SOC2907ARHRx
SOC2907ASW35
SOC2907AHRB
2N2907ARHRx
2N2907ASW35
2N2907AHR
JANS
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
ESCC
MIL-PRF-19500/291
5202/001
5202/001
5202/001
5202/001
5202/001
5202/001
5202/001
5202/001
5202/001
UB
UB
UB
UB
LCC-3
LCC-3
LCC-3
TO-18
TO-18
TO-18
September 2013
This is information on a product in full production.
DocID15382 Rev 6
Radiation level EPPL
-
100 krad ESCC
100 krad SW
-
100 krad ESCC
100 krad SW
-
100 krad ESCC
100 krad SW
-
-
Target
-
Target
Yes
-
Yes
-
-
-
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