SMA661AS Datasheet, PDF (1/10 Pages) STMicroelectronics – GPS HIGH GAIN LNA ICs

SMA661AS
GPS HIGH GAIN LNA ICs
GENERAL FEATURES
■ LOW NOISE FIGURE 1.4 dB @ 1.575 GHz
■ HIGH GAIN 17 dB @ 1.575 GHz
■ POWER DOWN FUNCTION
■ TEMPERATURE COMPENSATED
■ UNCONDITIONALLY STABLE
■ INTEGRATED OUTPUT MATCHING
■ ESD PROTECTION (± 2kV HBM)
■ 70 GHz Silicon Germanium TECHNOLOGY
■ LEAD-FREE STRAIGHT PACKAGE (SOT666)
APPLICATIONS
■ GPS
Figure 1. Package
PRELIMINARY DATA
SOT666 (Lead-Free)
1.65 x 1.2 x 0.57 mm
1
6
Top View
2
5
3
4
DESCRIPTION
SMA661AS is a product of the SMA Family
(Silicon MMIC Amplifiers), it uses ST state-of-the
art SiGe BiCMOS technology.
The excellent RF performances (17dB Gain and
1.4dB NF at 1.575GHz) and the few external
component counts (just one capacitor) make the
SMA661AS an ideal solution for GPS Low Noise
Amplifier. SMA661AS embeds a power down
function avoiding to use an external switch; in
power down mode (V_PD ≤ V_PDL ) the current con-
sumption is about 10 nA. It is housed in ultra min-
iature SOT666 plastic package (1.65mm x
1.2mm x 1.57mm).
Table 1. Pin Connection
Pin No.
1
2
3
4
5
6
Pin Name
RF IN
GND
PD
RF OUT
GND
Vcc
Table 2. Order Codes
Package
SOT666
Tape and Reel
SMA661ASTR
Figure 2. Circuit Schematic
VCC (6)
October 2005
RF input
C1
33nF
RF IN (1)
PD (3)
SMA661AS
RF OUT(4)
GND (2,5)
RF Output
Rev. 2
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