SMA540B Datasheet, PDF (1/4 Pages) STMicroelectronics – Active Biased RF Transistor

SMA540B
• HIGH GAIN LOW NOISE AMPLIFIERS
G_ms = 19 dB at 1.8 GHz
• CURRENT EASY ADJUSTABLE BY AN
EXTERNAL RESISTOR
• OPEN COLLECTOR OUTPUT
• TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V
• TRANSITION FREQUENCY 42 GHz
• ULTRA MINIATURE SOT323-4L PACKAGE
(LEAD FREE)
APPLICATIONS
• WIDEBAND APPLICATIONS
• CELLULAR AND CORDLESS TELEPHONES
• HIGH FREQUENCY OSCILLATORS
DESCRIPTION
The SMA540B is a NPN Transistor integrating a cur-
rent mirror as biasing. In this way the IC (collector
current) can be controlled setting the current at Bias
pin according to IC = 10 * IBIAS. The IBIAS current
is easy adjustable using an external resistor.
SMA540B is housed in ultra miniature SOT323-4L
package(LEAD FREE), the relative dimensions are
1.15mmx1.8mm with 0.8mm thickness.
Active Biased RF Transistor
PRELIMINARY DATA
SOT323-4L (SC70)
ORDER CODE
SMA540BTR
BRANDING
TBD
Bias, 4
C, 3
Bias
B, 1
E, 2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_ceo
V_ebo
I_c
I_b
I_BIAS
P_tot
Collector emitter voltage
Emitter base voltage
Collector current
Base current
BIAS Current
Total dissipation, T_s = 107 ^oC
T_op
Operating temperature
T_stg
Storage temperature
T_j
Max. operating junction temperature
THERMAL RESISTANCE
R_thjs
Thermal Resistance Junction soldering point
Value
4.5
1.5
40
4
4
120
-40 to +85
-65 to +150
150
< 270
Unit
V
V
mA
mA
mA
mW
o_C
o_C
o_C
o_C/W
January, 15 2003
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