SD57060 Datasheet, PDF (1/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoSTFAMILY

®
SD57060
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
s EXCELLENT THERMAL STABILITY
s COMMON SOURCE CONFIGURATION
s POUT = 60 W with 11.5 dB gain @ 945 MHz
s BeO FREE PACKAGE
DESCRIPTION
The SD57060 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060 is designed for high gain
and broadband performance operating in
common source mode at 28V. It is ideal for base
station applications requiring high linearity.
M243
epoxy sealed
ORDER CODE
BRANDING
SD57060
TSD57060
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (T_case = 25 ^oC)
Symbol
V_(BR)DSS
VGS
I_D
P _DISS
Tj
TSTG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70^oC)
Max. Operating Junction Temperature
Storage Temperature
1. Drain
2. Gate
3.Source
Value
65
± 20
7
108
200
-65 to 150
Uni t
V
V
A
W
o_C
o_C
THERMAL DATA (T_case = 70 ^oC)
R_th(j-c) Junction-Case Thermal Resistance
R_{th(c -s)*} Case-Heatsink T hermal Resist ance
1.2
0.45
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
o_{C/ W}
o_{C/ W}
January 2000
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