SD57030 Datasheet, PDF (1/7 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
SD57030
RF POWER TRANSISTORS
The LdmoST FAMILY
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 30 W WITH 13 dB gain @ 945 MHz
• BeO FREE PACKAGE
DESCRIPTION
The SD57030 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
M243
(Epoxy Sealed)
ORDER CODE
SD57030
BRANDING
TSD57030
PIN CONNECTION
1
3
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_DGR
Drain-Gate Voltage (R_GS = 1 MΩ)
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
March, 24 2003
1. Drain
2. Gate
2
3. Source
Value
Unit
65
V
65
V
+ 20
V
4
A
74
W
200
°C
-65 to + 200
°C
1.75
°C/W
1/7