SD57030-01 Datasheet, PDF (1/7 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoSTFAMILY

®
SD57030-01
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
s EXCELLENT THERMAL STABILITY
s COMMON SOURCE CONFIGURATION
s P_OUT = 30 W with 13 dB gain @ 945 MHz
s BeO FREE PACKAGE
DESCRIPTION
The SD57030-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57030-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
stations applications requiring high linearity.
M250
epoxy sealed
ORDER CODE
BRANDING
SD57030-01
XSD57030-01
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (T_case = 25 ^oC)
Symbol
V(BR)DSS
VGS
I_D
P DISS
T_j
TSTG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70^oC)
Max. Operating Junction Temperature
Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
January 2000
1. Drain
2. Gate
3.Source
Value
65
± 20
4
74
200
-65 to 150
1.75
Uni t
V
V
A
W
o_C
o_C
o_{C/ W}
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