SD56120 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS RF POWER TRANSISTORS

®
SD56120
RF POWER TRANSISTORS
The LdmoST FAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
s EXCELLENT THERMAL STABILITY
s COMMON SOURCE CONFIGURATION,
PUSH-PULL
s POUT = 100 W PEP WITH 13 dB GAIN @ 860
MHz
s BeO FREE PACKAGE
DESCRIPTION
The SD56120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120 is designed for high gain
and broadband performance operating in
common source mode at 28V. It is ideal for
broadcast applications from 470 to 860 MHz
requiring high linearity.
M246
epoxy sealed
ORDER CODE
SD56120
BRANDING
XSD56120
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ^oC)
Symbol
V(BR)DSS
VGS
ID
PDISS
Tj
TSTG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70^oC)
Max. Operating Junction Temperature
Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
Value
65
± 20
14
260
200
-65 to 150
Unit
V
V
A
W
o_C
o_C
0.5
o_C/W
November 1999
1/4