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SD5000 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
SD5000
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
....... GOLD METALLIZATION
EMITTER SITE BALLASTING
INTERNAL INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC PACKAGE
COMMON EMITTER CONFIGURATION
POUT = 1.5 W MIN. WITH 9.5 dB GAIN
PRELIMINARY DATA
.280 4L STUD (M122)
epoxy sealed
ORDER CODE
SD5000
B RA ND IN G
S10A015
PIN CONNECTION
DESCRIPTION
The SD5000 is a NPN Silicon Transistor designed
for high gain linear performance at 1000 MHz.
This part uses gold metallized die and polysilicon
site ballasting to achieve high reliability and rug-
gedness.
The SD5000 can be used for applications such
as Telecommunications, Radar, ECM, Space and
other commercial and military systems.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCES
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
50
50
3.5
1.0
7.0
+200
− 65 to +150
25
Unit
V
V
V
A
W
°C
°C
°C/W
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