SD1899 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

SD1899
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
... REFRACTORY/GOLD METALLIZATION
EFFICIENCY - 50% TYPICAL
POUT = 30 W MIN. WITH 9.3 dB GAIN
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
SD1899
BRANDING
SD1899
PIN CONNECTION
DE S CR I P TI ON
The SD1899 is a common base silicon NPN bipolar
device optimized for 1.6 GHz SATCOM applica-
tions.
SD1899 offers superior gain and collector effi-
ciency, making it an ideal choice for Class C power
amplifiers used in portable as well as fixed SAT-
COM terminals.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
V_{EB O}
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation (+25°C)
T_J
Junction Temperature
T_{ST G}
Storage Temperature
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance
January 6, 1997
1. Collector
2. Emitter
3. Base
V alu e
Unit
45
V
45
V
3.0
V
3.5
A
64. 8
W
+200
°_C
− 65 to +150
°_C
2.7
°C/W
1/5