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| SD1541-09 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |||
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SD1541-09
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
. DESIGNED FOR HIGH POWER PULSED
IFF APPLICATIONS
. 450 WATTS (min.) IFF 1030/1090 MHz
. 7.0 dB MIN. GAIN
. REFRACTORY GOLD METALLIZATION
. BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND
RUGGEDNESS
. 30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
. INPUT MATCHED, COMMON BASE
CONFIGURATION
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CODE
B RA ND IN G
SD1541-09
1541-9
PIN CONNECTION
DESCRIPTION
The SD1541-09 is a gold metallized silicon NPN
planar transistor. The SD1541-09 is designedfor
applications requiring high peak and low duty cy-
cles such as IFF. The SD1541-09 is packaged in
a metal/ceramic package with internal input match-
ing, resulting in improved broadband performance
and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
65
V
65
V
3.5
V
22
A
1458
W
+200
°C
â 65 to +150
°C
0.12
°C/W
1/4
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