SD1530-08 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

SD1530-08
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
. DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
. 40 WATTS (typ.) IFF 1030 - 1090 MHz
. 35 WATTS (min.) DME 1025 - 1150 MHz
. 25 WATTS (typ.) TACAN 960 - 1215 MHz
. 9.0 dB MIN. GAIN
. REFRACTORY GOLD METALLIZATION
. EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
. INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
. INPUT MATCHED, COMMON BASE
CONFIGURATION
.250 SQ. 2LFL (M105 )
hermetically sealed
ORDER CODE
BRAND ING
SD1530-08
1530-8
PIN CONNECTION
D ESCR I PTI O N
The SD1530-08 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-08 is pack-
aged in the .250” input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symbol
Pa ra m e ter
VCBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
IC
Device Current
PDISS
Power Dissipation
T_J
T_STG
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
August 1993
1. Collector
2. Base
3. Emitter
Value
Unit
65
V
65
V
3.5
V
2.6
A
87.5
W
+200
°_C
− 65 to +150
°_C
2.0
°C/W
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