RTP315N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – Aerospace and defense N-channel 100 V

RTP315N10F7
Aerospace and defense N-channel 100 V, 2.3 mΩ typ., 180 A
STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - target specification
Features
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
'7$%
*
6
$0Y
Order code
RTP315N10F7
V_DS R_DS(on) max. I_D
100 V 2.7 mΩ 180 A
• Intended for use in aerospace and defense
applications
• Dedicated traceability and part marking
• Production parts approval documents available
• Adapted extended life time and obsolescence
management
• Extended product change notification process
• Designed and manufactured to meet sub ppm
quality goals
• Extended screening capability on request
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes the
STripFET™ F7 technology with enhanced trench-
gate structure that result in very low on-state
resistance while also reducing internal
capacitances and gate charge for faster and very
efficient switching.
Order code
RTP315N10F7
Table 1. Device summary
Marking
Package
R315N10F7
TO-220
Packaging
Tube
September 2014
DocID026884 Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/13
www.st.com