RMPA1965_06 Datasheet, PDF (1/19 Pages) Fairchild Semiconductor – US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge TM Power Amplifier Module

STB60N55F3 - STD60N55F3 - STF60N55F3
STP60N55F3 - STU60N55F3
N-channel 55V - 6.5mΩ - 80A - DPAK - IPAK - D²PAK - TO-220/FP
STripFET™ Power MOSFET
General features
Type
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
V_DSS
55V
55V
55V
55V
55V
R_DS(on)
<8.5mΩ
<8.5mΩ
<8.5mΩ
<8.5mΩ
<8.5mΩ
■ Standard threshold drive
■ 100% avalanche tested
I_D
Pw
80A 110W
80A 110W
42A 30W
80A 110W
80A 110W
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics' unique “Single Feature
Size™“ strip-based process, which has
decreased the critical alignment steps, offering
remarkable manufacturing reproducibility. The
outcome is a transistor with extremely high
packing density for low onresistance, rugged
avalanche characteristics and low gate charge.
Applications
■ Switching application
3
2
1
TO-220FP
3
1
D²PAK
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
Marking
60N55F3
60N55F3
60N55F3
60N55F3
60N55F3
Package
D²PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape & reel
Tape & reel
Tube
Tube
Tube
March 2007
Rev 3
1/19
www.st.com
19