PD85006-E Datasheet, PDF (1/17 Pages) STMicroelectronics – Excellent thermal stability

PD85006-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ Broadband performances:
P_OUT = 6 W with 15 dB gain @ 870 MHz/13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD85006-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD85006-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package.
PowerSO-10RF’s superior linearity performance
makes it an ideal solution for mobile radio
applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performance and ease of assembly.
Mounting recommendations are available in
www.st.com/rf (search for AN1294).
PowerSO-10RF
(formed lead)
Figure 1. Pin connections
Source
Gate
Drain
Table 1.
Device summary
Order codes
PD85006-E
PD85006TR-E
August 2010
Packages
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
Doc ID 16208 Rev 3
Packaging
Tube
Tape and reel
1/17
www.st.com
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