PD84006-E Datasheet, PDF (1/11 Pages) STMicroelectronics – Excellent thermal stability

PD84006-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Datasheet −production data
Features
■ Excellent thermal stability
■ Common source configuration
■ Broadband performances: P_OUT = 6 W with 13
dB gain @ 870 MHz
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European
directive
Description
The PD84006-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF ’s superior
linearity performance makes it an ideal solution
for portable radio and UHF RFID reader. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
Figure 1. Pin connections
Source
Gate
Drain
Table 1.
Device summary
Order code
PD84006-E
Package
PowerSO-10RF (formed lead)
Packaging
Tube
May 2012
This is information on a product in full production.
Doc ID 16087 Rev 2
1/11
www.st.com
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