PD57030 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD57030
PD57030S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 13 dB gain @ 945 MHz / 28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57030 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57030 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57030’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD57030
XPD57030
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD57030S
XPD57030S
ABSOLUTE MAXIMUM RATINGS(T_CASE = 25 ⁰C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS
T_j
Power Dissipation (@ Tc = 70 ⁰C)
Max. Operating Junction Temperature
T_STG Storage Temperature
THERMAL DATA (T_CASE = 70 ⁰C)
R_th(j-c) Junction-Case Thermal Resistance
May 2000
Value
65
±20
4
52.8
165
-65 to 175
1.8
Unit
V
V
A
W
0_C
0_C
0_C/W
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