PD57030-E Datasheet, PDF (1/18 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57030-E
PD57030S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 30W with 14dB gain @ 945MHz / 28V
■ New RF plastic package
Description
The PD57030 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies up to 1 GHz.
PD57030 boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology
mounted in the first true SMD plastic RF power
package, PowerSO-10RF. PD57030’s superior
linearity performance makes it an ideal solution
for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Order codes
Part number
Package
PD57030-E
PD57030S-E
PD57030TR-E
PD57030STR-E
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
August 2006
Rev 1
1/18
www.st.com
18