PD55008L Datasheet, PDF (1/9 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
PD55008L
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
ADVANCED DATA
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 8 W with 17 dB gain @ 500 MHz / 12.5V
• INTEGRATED ESD PROTECTION
• NEW LEADLESS PLASTIC PACKAGE
• SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD55008L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies up
to 1 GHz.
PD55008L boasts the excellent gain, linearity and
reliability of STH1LV latest LDMOS technology
mounted in the innovative leadless SMD plastic
package, PowerFLAT™. PD55008L’s superior
linearity performance makes it an ideal solution for
car mobile radio.
PowerFLAT™(5x5)
ORDER CODE
PD55008L
BRANDING
55008
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
May, 29 2003
Value
40
-0.5 to 15
5
19.5
150
-65 to +150
4.1
Unit
V
V
A
W
°C
°C
°C/W
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