PD54008-PD54008S Datasheet, PDF (1/10 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD54008 - PD54008S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD54008 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54008’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54008
XPD54008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54008S
XPD54008S
ABSOLUTE MAXIMUM RATINGS(T_CASE = 25 ^OC)
Symbol
Parameter
V_(BR)DSS Drain Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_{DISS Power Dissipation (@ Tc = 70} ⁰_C)
T_j
Max. Operating Junction Temperature
T_STG Storage Temperature
THERMAL DATA
R_th(j-c) Junction-Case Thermal Resistance
May 2000
Value
25
±20
5
73
165
-65 to 165
1.3
Unit
V
V
A
W
0C
0C
0_C/W
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