PD54003-PD54003S Datasheet, PDF (1/10 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD54003 - PD54003S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD5400 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54003’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54003
XPD54003
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54003S
XPD54003S
ABSOLUTE MAXIMUM RATINGS(T_CASE = 25 ^OC)
Symbol
Parameter
V_(BR)DSS Drain Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_{DISS Power Dissipation (@ Tc = 70} ⁰_C)
T_j
Max. Operating Junction Temperature
T_STG Storage Temperature
THERMAL DATA
R_th(j-c) Junction-Case Thermal Resistance
May 2000
Value
25
±20
4
52.8
165
-65 to 165
1.8
Unit
V
V
A
W
0C
0C
0_C/W
1/10