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NAND256-M Datasheet, PDF (1/23 Pages) STMicroelectronics – 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP | |||
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NAND256-M
NAND512-M, NAND01G-M
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Features
â Multi-Chip Packages
â 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 1 die of 256 Mb (x16) SDR
LPSDRAM
â 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 2 dice of 256 Mb (x16) SDR
LPSDRAMs
â 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash +1 die of 256 Mb (x16) DDR
LPSDRAM
â 1 die of 512 Mb (x16) NAND Flash + 1 die
of 256 Mb or 512 Mb (x16) DDR LPSDRAM
â Supply voltages
â VDDF = 1.7V to 1.95V or 2.5V to 3.6V
â VDDD = VDDQD = 1.7V to 1.9V
â Electronic Signature
â ECOPACK® packages
â Temperature range
â -30 to 85°C
Flash Memory
â NAND Interface
â x8 or x16 bus width
â Multiplexed Address/ Data
â Page size
â x8 device: (512 + 16 spare) Bytes
â x16 device: (256 + 8 spare) Words
â Block size
â x8 device: (16K + 512 spare) Bytes
â x16 device: (8K + 256 spare) Words
â Page Read/Program
â Random access: 15µs (max)
â Sequential access: 50ns (min)
â Page program time: 200µs (typ)
â Copy Back Program mode
â Fast page copy without external buffering
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
LFBGA137 10.5 x 13 x 1.4mm
TFBGA137 10.5 x 13 x 1.2 mm(1)
(1) Preliminary specifications.
â Fast Block Erase
â Block erase time: 2ms (typ)
â Status Register
â Data integrity
â 100,000 Program/Erase cycles
â 10 years Data Retention
LPSDRAM
â Interface: x16 or x 32 bus width
â Deep Power Down mode
â 1.8v LVCMOS interface
â Quad internal Banks controlled by BA0 and
BA1
â Automatic and controlled Precharge
â Auto Refresh and Self Refresh
â 8,192 Refresh cycles/64ms
â Programmable Partial Array Self Refresh
â Auto Temperature Compensated Self
Refresh
â Wrap sequence: sequential/interleave
â Burst Termination by Burst Stop command and
Precharge command
August 2006
Rev 5
1/23
www.st.com
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