NAND01G-N Datasheet, PDF (1/23 Pages) STMicroelectronics – 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package

NAND01G-N
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and
512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
PRELIMINARY DATA
Features summary
■ Multi-chip Package
– NAND Flash Memory
– 512 Mbit or 1 Gbit (x8/x16) Large Page
Size NAND Flash Memory
– 512 Mbit (x16) SDR or DDR LPSDRAM
■ Temperature range
– -30 up to 85 °C
■ Supply voltage
– NAND Flash : V_DDF = 1.7V to 1.95V
– LPSDRAM: V_DDD = V_DDQD = 1.7V to 1.9V
■ Electronic Signature
■ ECOPACK^ packages
Flash Memory
■ Nand Interface
– x8 or x16 bus width
– Multiplexed address/data
■ Page size
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
■ Block size
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
■ Page Read/Program
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
■ Copy Back Program mode
– Fast page copy without external buffering
■ Fast Block Erase
– Block Erase time: 2ms (typ)
■ Chip Enable ‘don’t care’
– for simple interfacing with microcontrollers
■ Status Register
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
SDR/DDR LPSDRAM
■ Interface: x16 bus width
■ Programmable Partial Array Self Refresh
■ Auto Temperature Compensated Self Refresh
■ Deep Power Down mode
■ 1.8V LVCMOS interface
■ Quad internal Banks controlled by BA0 and
BA1
■ Wrap sequence: Sequential/Interleaved
■ Automatic and Controlled Precharge
■ Auto Refresh and Self Refresh
■ 8,192 Refresh Cycles/64ms
■ Burst Termination by Burst Stop command and
Precharge Command
January 2006
Rev1.0
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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