NAND01G-B2B Datasheet, PDF (1/62 Pages) STMicroelectronics – 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01G-B2B
NAND02G-B2C
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Features
■ High Density NAND Flash memories
– Up to 2 Gbit memory array
– Cost effective solutions for mass
storage applications
■ NAND interface
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ Supply voltage: 1.8V/3.0V
■ Page size
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
■ Block size
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
■ Page Read/Program
– Random access: 25µs (max)
– Sequential access: 30ns (min)
– Page program time: 200µs (typ)
■ Copy Back Program mode
■ Cache Program and Cache Read modes
■ Fast Block Erase: 2ms (typ)
■ Status Register
■ Electronic Signature
■ Chip Enable ‘don’t care’
Table 1.
Product List
Reference
NAND01G-B2B
NAND02G-B2C
1. x16 organization only available for MCP Products.
TSOP48 12 x 20mm
FBGA
VFBGA63 9.5 x 12 x 1mm
VFBGA63 9 x 11 x 1mm
■ Serial Number option
■ Data protection
– Hardware Block Locking
– Hardware Program/Erase locked during
Power transitions
■ Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
■ ECOPACK^® packages
■ Development tools
– Error Correction Code models
– Bad Blocks Management and Wear
Leveling algorithms
– Hardware simulation models
Part Number
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B, NAND01GW4B2B⁽¹⁾
NAND02GR3B2C, NAND02GW3B2C
NAND02GR4B2C, NAND02GW4B2C⁽¹⁾
November 2006
Rev 3
1/62
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