MSC83305 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC83305
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. EMITTER BALLASTED
. VSWR CAPABILITY _∞:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC^® PACKAGE
. POUT = 4.5 W MIN. WITH 4.5 dB GAIN
@ 3.0 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC83305
BRANDING
83305
PIN CONNECTION
DESCRIPTION
The MSC83305 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an emitter site ballasted geometry with a
refractory gold metallization system. This device
is capable of withstanding an infinite load VSWR
at any phase angle under rated conditions. The
MSC83305 was designed for Class C amplifier/os-
cillator applications in the 1.0 - 3.0 GHz frequency
range.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 50˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
17.6
W
700
mA
30
V
200
°_C
− 65 to +200
°_C
8.5
°_C/W
1/5