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| MSC83301 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |||
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MSC83301
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. VSWR CAPABILITY â:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC® PACKAGE
. POUT = 1.0 W MIN. WITH 7.0 dB GAIN
@ 3.0 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC83301
BRANDING
83301
PIN CONNECTION
DESCRIPTION
The MSC83301 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geome-
try with a refractory gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated con-
ditions. The MSC83301 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ⤠50°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
September 2, 1994
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
6.0
W
200
mA
30
V
200
°C
â 65 to +200
°C
25
°C/W
1/5
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