MSC82307 Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82307
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC^® PACKAGE
. POUT = 7.0 W MIN. WITH 9.6 dB GAIN
PRELIMINARY DATA
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82307
BRANDING
82307
PIN CONNECTION
DESCRIPTION
The MSC82307 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82307 was designed for Class C ampli-
fier/oscillator applications in the 1.5 - 2.3 GHz fre-
quency range.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 50˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
21.4
W
1.2
A
26
V
200
°_C
− 65 to +200
°_C
7.0
°_C/W
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