MSC82306 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82306
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. REFRACTORY\GOLD METALLIZATION
. VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC^® PACKAGE
. POUT = 5.5 W MIN. WITH 9.6 dB GAIN
PRELIMINARY DATA
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82306
B RA ND IN G
82306
PIN CONNECTION
DESCRIPTION
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
PDISS
I_C
V_CC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 50°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
16.7
W
900
mA
26
V
200
°_C
− 65 to +200
°_C
9.0
°_C/W
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