MSC82304 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82304
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC^® PACKAGE
. POUT = 3.8 W MIN. WITH 10.0 dB GAIN
PRELIMINARY DATA
.250 2LFL (S010)
hermeticaly sealed
ORDER CODE
MSC82304
BRANDING
82304
PIN CONNECTION
DESCRIPTION
The MSC82304 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82304 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
PDISS
I_C
V_CC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 50°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
11.5
W
600
mA
26
V
200
°_C
− 65 to +200
°_C
13
°_C/W
1/4