MSC82100 Datasheet, PDF (1/6 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

MSC82100
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
. EMITTER BALLASTED
. CLASS A LINEAR OPERATION
. COMMON EMITTER
. VSWR CAPABILITY _∞:1 @ RATED
CONDITIONS
. ft 1.6 GHz TYPICAL
. NOISE FIGURE 15.5 dB @ 2 GHz
. P_OUT = 27 dBm MIN. @ 1.0 GHz
.250 2LFL (S011)
hermetically sealed
ORDER CODE
MSC82100
BRANDING
82100
PIN CONNECTION
DESCRIPTION
The MSC82100 is a hermetically sealed NPN
power transistor with a fishbone, emitter finger
ballasted geometry utilizing a refractory/gold me-
tallization system. The device is designed speci-
fically for Class A linear applications to provide
high gain and high output power at the 1.0 dB
compression point.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
Parameter
PDISS
I_C
V_CE
TJ
TSTG
Power Dissipation (see Safe Area)
Device Bias Current
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
Unit
—
W
200
mA
20
V
200
°_C
− 65 to +200
°_C
20
°_C/W
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