MSC82010 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC82010
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. EMITTER BALLASTED
. VSWR CAPABILITY _∞:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC^® PACKAGE
. POUT = 10 W MIN. WITH 5.2 dB GAIN @
2.0 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82010
B RA ND IN G
82010
PIN CONNECTION
DESCRIPTION
The MSC82010 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82010 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
Parameter
PDISS
I_C
V_CC
TJ
TSTG
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
35
W
1.5
A
35
V
200
°_C
− 65 to +200
°_C
5.0
°_C/W
1/5