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| MSC82005 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |||
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MSC82005
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. EMITTER BALLASTED
. VSWR CAPABILITY â:1 @ RATED
CONDITIONS
. REFRACTORY/GOLD METALLIZATION
. HERMETIC STRIPAC® PACKAGE
. POUT = 5.0 W MIN. WITH 7.0 dB GAIN
@ 2.0 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82005
B RA ND IN G
82005
PIN CONNECTION
DESCRIPTION
The MSC82005 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82005 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
PDISS
IC
VCC
TJ
TSTG
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
29
W
1.0
A
35
V
200
°C
â 65 to +200
°C
6.0
°C/W
1/5
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