MSC81450M Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81450M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
...... REFRACTORY\GOLD METALLIZATION
RUGGEDIZED VSWR 25:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 450 W MIN. WITH 7.0 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
MSC81450M
BRANDING
81450M
PIN CONNECTION
DESCRIPTION
The MSC81450M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
25:1 load mismatch at any phase angle under full
rated conditions.
The MSC81450M is housed in the unique BIG-
PAC™ package with internal input/output match-
ing structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
Parameter
P_DISS
Power Dissipation*
I_C
Device Current*
V_CC
Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
T _{ST G}
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
910
W
28
A
55
V
250
°_C
− 65 to +200
°_C
0.15
°_C/W