MSC81325M Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81325M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER BALLASTED
RUGGEDIZED VSWR _∞:1
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 6.7 dB GAIN
PRELIMINARY DATA
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
MSC81325M
BRANDING
81325M
DESCRIPTION
The MSC81325M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding an infinite
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high relia-
bility and product consistency.
The MSC81325M is housed in the industry-stand-
ard AMPAC™ metal/ceramic hermetic package
with internal input/output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 100˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
880
W
24
A
55
V
250
°_C
− 65 to +200
°_C
0.17
°_C/W
October 1992
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