MSC81058 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC81058
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. EMITTER BALLASTED
. REFRACTORY/GOLD METALLIZATION
. VSWR CAPABILITY _∞:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC^® PACKAGE
. P_OUT = 10 W MIN. WITH 10 dB GAIN
@ 1 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC81058
BRANDING
81058
PIN CONNECTION
DESCRIPTION
The MSC81058 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone, emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding infinite load VSWR at any
phase angle under rated conditions.
The MSC81058 is designed for Class C amplifier
applications in the 0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
Parameter
PDISS
I_C
V_CC
TJ
TSTG
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
29
W
1.0
A
35
V
200
°_C
− 65 to +200
°_C
6.0
°_C/W
1/5