MSC81035MP Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81035MP
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞^{:1 VSWR CAPABILITY}
LOW THERMAL RESISTANCE
INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 35 W MIN. WITH 10.7 dB GAIN
.280 4LSL (S051)
epoxy sealed
ORDER CODE
MSC81035MP
BRANDING
81035MP
DESCRIPTION
The MSC81035MP is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035MP. MSC81035MP of-
fers improved saturated ouput power and collector
efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized auto-
matic wire bonding techniques ensure high relia-
bility and product consistency.
The MSC81035MP is housed in the IMPAC™ pack-
age with internal input matching.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
Parameter
PDISS
Power Dissipation* (TC ≤ 100°C)
IC
Device Current*
V_CC
Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
Unit
150
W
3.0
A
55
V
250
°_C
− 65 to +150
°_C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
1.0
°_C/W
October 1992
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