MSC81035M Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81035M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞^{:1 VSWR CAPABILITY}
LOW THERMAL RESISTANCE
INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 35 W MIN. WITH 10.7 dB GAIN
.280 2LFL (S068)
epoxy sealed
ORDER CODE
MSC81035M
B RA ND IN G
81035M
DESCRIPTION
The MSC81035M is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035M. MSC81035M of-
fers improved saturated ouput power and collec-
tor efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high reli-
ability and product consistency.
The MSC81035M is housed in the IMPAC™
package with internal input matching.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
Parameter
PDISS
IC
V_CC
T_J
TSTG
Power Dissipation* (TC ≤ 100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
Value
150
3.0
55
250
− 65 to +200
1.0
Unit
W
A
V
°_C
°_C
°_C/W
September 2, 1994
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