 English |
|
|
|
|
|
|
|
| MSC81020 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |||
| |||
|
MSC81020
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
..... EMITTER BALLASTED
REFRACTORY/GOLD METALLIZATION
LOW THERMAL RESISTANCE
HERMETIC STRIPAC® PACKAGE
POUT = 20 W MIN. WITH 10 dB GAIN
@ 1 GHz
.230 2L STUD (S016)
hermetically sealed
ORDER CODE
MSC81020
BRANDING
81020
PIN CONNECTION
DESCRIPTION
The MSC81020 is a common base hermetically
sealed silicon NPN microwave tranisitor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
designed for Class C amplifier applications in the
0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
PDISS
IC
VCC
TJ
TSTG
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
Value
Unit
35
W
1.50
A
35
V
200
°C
â 65 to +200
°C
5.0
°C/W
1/5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese