MSC81005 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC81005
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
. EMITTER BALLASTED
. REFRACTORY/GOLD METALLIZATION
. VSWR CAPABILITY _∞:1 @ RATED
CONDITIONS
. HERMETIC STRIPAC^® PACKAGE
. P_OUT = 5.0 W MIN. WITH 10 dB GAIN
@ 1 GHz
.230 2L STUD (S016)
hermetically sealed
ORDER CODE
MSC81005
BRANDING
81005
PIN CONNECTION
DESCRIPTION
The MSC81005 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC81005 is designed for Class C amplifier ap-
plications in the 0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
PDISS
I_C
V_CC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 50°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Base
3. Emitter
Value
Unit
18.75
W
600
mA
35
V
200
°_C
− 65 to +200
°_C
8.0
°_C/W
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