MSC80196 Datasheet, PDF (1/6 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

MSC80196
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
. EMITTER BALLASTED
. CLASS A LINEAR OPERATION
. COMMON EMITTER
. VSWR CAPABILITY 15:1 @ RATED
CONDITIONS
. ft 3.2 GHz TYPICAL
. NOISE FIGURE 12.5 dB @ 2 GHz
. POUT = 30.0 dBm MIN.
.250 2LFL (S011)
hermetically sealed
ORDER CODE
MSC80196
BRANDING
80196
PIN CONNECTION
DESCRIPTION
The MSC80196 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
PDISS
IC
VCE
TJ
TSTG
Parameter
Power Dissipation (see Safe Area)
Device Bias Current
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
Unit
—
W
500
mA
20
V
200
°_C
− 65 to +200
°_C
17
°_C/W
1/6