MSC80185 Datasheet, PDF (1/6 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

MSC80185
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
. EMITTER BALLASTED
. CLASS A LINEAR OPERATION
. COMMON EMITTER
. VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
. ft 3.2 GHz TYPICAL
. NOISE FIGURE 12.0 dB @ 2 GHz
. POUT = 28 dBm MIN. @ 2.0 GHz
.230 4L STUD (S027)
hermetically sealed
ORDER CODE
MSC80185
BRANDING
80185
PIN CONNECTION
DESCRIPTION
The MSC80185 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
PDISS
IC
VCE
TJ
TSTG
Parameter
Power Dissipation (see Safe Area)
Device Bias Current
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
Unit
—
W
300
mA
20
V
200
°_C
− 65 to +200
°_C
35
°_C/W
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